Lick Spectral Indices for Super Metal-rich Stars

The Lick Fe5015, Fe5270, Fe5335, Mgb and Mg2 indices are presented for 139 candidate SMR stars of different luminosity class studied in Malagnini et al. (2000). Evidence is found for a standard (i.e. [Mg/Fe]~0) Mg vs. Fe relative abundance. Both the Worthey et al. (1994) and Buzzoni et al. (1992, 1994) fitting functions are found to suitably match the data at super-solar metallicity regimes. See http://www.merate.mi.astro.it/~eps/home.html for further details.Comment: 16 pages with 11 figures (Aastex format). To appear in the Nov. '01 issue of the PAS

Ultrafast Momentum Imaging of Pseudospin-Flip Excitations in Graphene

The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photo-excited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization, and are maximum perpendicular to it. Here, we use time- and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics, sampling carrier distributions as a function of energy and in-plane momentum. We first show that the rapidly-established quasi-thermal electron distribution initially exhibits an azimuth-dependent temperature, consistent with relaxation through collinear electron-electron scattering. Azimuthal thermalization is found to occur only at longer time delays, at a rate that depends on the substrate and the static doping level. Further, we observe pronounced differences in the electron and hole dynamics in n-doped samples. By simulating the Coulomb- and phonon-mediated carrier dynamics we are able to disentangle the influence of excitation fluence, screening, and doping, and develop a microscopic picture of the carrier dynamics in photo-excited graphene. Our results clarify new aspects of hot carrier dynamics that are unique to Dirac materials, with relevance for photo-control experiments and optoelectronic device applications.Comment: 23 pages, 12 figure

Tracking primary thermalization events in graphene with photoemission at extreme timescales

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have excess energies higher than the band gap itself. In graphene, which is gapless, inverse Auger scattering is instead predicted to be dominant at the earliest time delays. Here, $<8$ femtosecond extreme-ultraviolet pulses are used to detect this imbalance, tracking both the number of excited electrons and their kinetic energy with time- and angle-resolved photoemission spectroscopy. Over a time window of approximately 25 fs after absorption of the pump pulse, we observe an increase in conduction band carrier density and a simultaneous decrease of the average carrier kinetic energy, revealing that relaxation is in fact dominated by inverse Auger scattering. Measurements of carrier scattering at extreme timescales by photoemission will serve as a guide to ultrafast control of electronic properties in solids for PetaHertz electronics.Comment: 16 pages, 8 figure

On the behavior of site effects in central Mexico (the Mexican volcanic belt &ndash; MVB), based on records of shallow earthquakes that occurred in the zone between 1998 and 2011

The Mexican volcanic belt (MVB) is a seismogenic zone that transects the central part of Mexico with an east–west orientation. The seismic risk and hazard of this seismogenic zone has not been studied in detail due to the scarcity of instrumental data as well as because seismicity in the continental regime of central Mexico is not too frequent. However, it is known that there are precedents of large earthquakes (<i>M</i>_w > 6.0) that have taken place in this zone. The valley of Mexico City (VM) is the sole zone, within the MVB, that has been studied in detail. Studies have mainly focused on the ground amplification during large events such as the 1985 subduction earthquake that occurred off coast of Michoacán. The purpose of this article is to analyze the behavior of site effects in the MVB zone based on records of shallow earthquakes (data not reported before) that occurred in the zone between 1998 and 2011. We present a general overview of site effects in the MVB, a classification of the stations in order to reduce the uncertainty in the data when obtaining attenuation parameters in future works, as well as some comparisons between the information presented here and that presented in previous studies. <br><br> A regional evaluation of site effects and Fourier acceleration spectrum (FAS) shape was estimated based on 80 records of 22 shallow earthquakes within the MVB zone. Data of 25 stations were analyzed. Site effects were estimated by using the horizontal-to-vertical spectral ratio (HVSR) methodology. The results show that seismic waves are less amplified in the northeast sites of the MVB with respect to the rest of the zone and that it is possible to classify two groups of stations: (1) stations with negligible site amplification (NSA) and (2) stations with significant site amplification (SSA). Most of the sites in the first group showed small (<3) amplifications while the second group showed amplifications ranging from 4 to 6.5 at frequencies of about 0.35, 0.75, 15 and 23 Hz. With these groups of stations, average levels of amplification were contrasted for the first time with those caused by the subduction zone earthquakes. With respect to the FAS shapes, most of them showed similarities at similar epicentral distances. Finally, some variations of site effects were found when compared to those obtained in previous studies on different seismicity regions. These variations were attributed to the location of the source. <br><br> These aspects help to advance the understanding about the amplification behavior and of the expected seismic risk on central Mexico due to large earthquakes within the MVB seismogenic zone

Direct evidence for efficient ultrafast charge separation in epitaxial WS₂/graphene heterostructures

We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS2 and graphene. This heterostructure combines the benefits of a direct-gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobility and long spin lifetimes. We find that, after photoexcitation at resonance to the A-exciton in WS2, the photoexcited holes rapidly transfer into the graphene layer while the photoexcited electrons remain in the WS2 layer. The resulting charge-separated transient state is found to have a lifetime of ∼1 ps. We attribute our findings to differences in scattering phase space caused by the relative alignment of WS2 and graphene bands as revealed by high-resolution ARPES. In combination with spin-selective optical excitation, the investigated WS2/graphene heterostructure might provide a platform for efficient optical spin injection into graphene